technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com npn silicon transistor qualified per mil-prf-19500/317 t4-lds-0057 rev. 3 (110213) page 1 of 8 devices levels 2n2369a 2n2369aub 2n4449 jan 2n2369au 2n2369aubc * jantx 2n2369aua jantxv jans * available to jans quality level only. absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit collector-emitter voltage v ceo 15 vdc emitter-base voltage v ebo 4.5 vdc collector-base voltage v cbo 40 vdc collector-emitter voltage i ces 40 vdc total power dissipation @ t a = +25c 2n2369a; 2n4449 ua, ub, ubc u p t 0.36 (1) 0.36 (1, 3) 0.50 (2) w operating & storage junction temperature range t op , t stg -65 to +200 c thermal char acteristics parameters / test conditions symbol value unit thermal resistance, ambient-to-case r ? ja c/w 2n2369a; 2n4449 ua, ub, ubc u 400 486 (3) 350 note: 1. derate linearly 2.06 mw/c above t a = +25c. 2. derate linearly 3.44 mw/c above t a = +54.5c. 3. mounted on fr-4 pcb (1oz. cu) with contacts 20 mils larger than package pads. electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics collector-emitter breakdown voltage i c = 10madc v (br)ceo 15 vdc collector-base cutoff current v ce = 20vdc i ces 0.4 ? adc to-18 (to-206aa) 2n2369a to-46 (to-206ab) 2n4449 surface mount ua surface mount ub & ubc (ubc = ceramic lid version) surface mount u (dual transistor)
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0057 rev. 3 (110213) page 2 of 8 electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off characteristics emitter-base cutoff current i ebo ? adc v eb = 4.5vdc v eb = 4.0vdc 10 0.25 collector- base cutoff current i cbo ? adc v cb = 40vdc v cb = 32vdc 10 0.2 on characteristics (1) forward-current transfer ratio h fe i c = 10madc, v ce = 0.35vdc i c = 30madc, v ce = 0.4vdc i c = 10madc, v ce = 1.0vdc i c = 100madc, v ce = 1.0vdc 40 30 40 20 120 120 120 120 collector-emitter saturation voltage v ce(sat) vdc i c = 10madc, i b = 1.0madc i c = 30madc, i b = 3.0madc i c = 100madc, i b = 10madc 0.20 0.25 0.45 base-emitter saturation voltage v be(sat) vdc i c = 10madc, i b = 1.0madc i c = 30madc, i b = 3.0madc i c = 100madc, i b = 10madc 0.70 0.80 0.85 0.90 1.20 dynamic characteristics parameters / test conditions symbol min. max. unit forward current transfer ratio i c = 10madc, v ce = 10vdc, f = 100mhz |h fe | 5.0 10 output capacitance c obo 4.0 pf v cb = 5.0vdc, i e = 0, 100khz ? f ? 1.0mhz input capacitance c ibo 5.0 pf v eb = 0.5vdc, i c = 0, 100khz ? f ? 1.0mhz switching characteristics parameters / test conditions symbol min. max. unit turn-on time i c = 10madc; i b1 = 3.0madc, i b2 = -1.5madc t on 12 ? s turn-off time i c = 10madc; i b1 = 3.0madc, i b2 = -1.5madc t off 18 ? s charge storage time i c = 10madc; i b1 = 10madc, i b2 = 10madc t s 13 ? s (1) pulse test: pulse width = 300 ? s, duty cycle ? 2.0%.
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0057 rev. 3 (110213) page 3 of 8 package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. beyond r (radius) maximum, th shall be held for a minimum length of .011 (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum ma terial condition (mmc) relative to tab at mmc. 7. dimension lu applies between l1 and l2. dimension ld applies between l2 and ll minimum. diameter is uncontrolled in l1 and beyond ll minimum. 8. all three leads. 9. the collector shall be internally connected to the case. 10. dimension r (radius) applies to both inside corners of tab. 11. in accordance with asme y14.5m , diameters are equivalent to x symbology. 12. lead 1 = emitter, lead 2 = base, lead 3 = collector. figure 1. physical dimensions to-18 (2n2369a). dimensions ltr inches millimeters notes min max min max cd .178 .195 4.52 4.95 ch .170 .210 4.32 5.33 hd .209 .230 5.31 5.84 lc .100 tp 2.54 tp 6 ld .016 .021 0.41 0.53 7,8 ll .500 .750 12.70 19.05 7,8,13 lu .016 .019 0.41 0.48 7,8 l 1 .050 1.27 7,8 l 2 .250 6.35 7,8 p .100 2.54 5 q .030 0.76 5 tl .028 .048 0.71 1.22 3,4 tw .036 .046 0.91 1.17 3 r .010 0.25 10 45 tp 45 tp 6
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0057 rev. 3 (110213) page 4 of 8 notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. symbol tl is measured from hd maximum. 4. details of outline in this zone are optional. 5. leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of tp relative to tab. device may be measured by direct methods or by gauge. 6. symbol lu applies between l1 and l2. dimension ld applies between l2 and ll minimum. 7. lead number three is electrically connected to case. 8. beyond r maximum, tw shall be held for a minimum length of .011 inch (0.28 mm). 9. symbol r applied to both inside corners of tab. 10. in accordance with asme y14.5m , diameters are equivalent to x symbology. 11. lead 1 is emitter, lead 2 is base, and lead 3 is collector. figure 2. physical dimensions - to-46 (2n4449). dimensions ltr inches millimeters notes min max min max cd .178 .195 4.52 4.95 ch .065 .085 1.65 2.16 hd .209 .230 5.31 5.84 lc .100 tp 2.54 tp 5 ld .016 .021 0.41 0.53 ll .500 1.750 12.70 44.45 6 lu .016 .019 0.41 0.48 6 l 1 .050 1.27 6 l 2 .250 6.35 6 q .040 1.02 3 tl .028 .048 0.71 1.22 8 tw .036 .046 0.91 1.17 4 r .010 0.25 9 45 tp 45 tp
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0057 rev. 3 (110213) page 5 of 8 figure 3. physical dimensions - surface mount (ub version, 2n2369aub). notes: dimensions 1. dimensions are in inches. ltr inches millimeters notes 2. millimeters are given for general information only. min max min max 3. hatched areas on package denote metallized areas. bh .046 .056 1.17 1.42 4. lid material: kovar. bl .115 .128 2.92 3.25 5. pad 1 = base, pad 2 = emitter, pad 3 = collector, bw .085 .108 2.16 2.74 pad 4 = shielding connected to the lid. cl .128 3.25 6. in accordance with asme y14.5m , diameters are equivalent to cw .108 2.74 ? x symbology. ll1 .022 .038 0.56 0.96 ll2 .017 .035 0.43 0.89 ls1 .036 .040 0.91 1.02 ls2 .071 .079 1.81 2.01 lw .016 .024 0.41 0.61 r .008 .203 r1 .012 .305 r2 .022 .559
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0057 rev. 3 (110213) page 6 of 8 notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. hatched areas on package denote metallized areas 4. pad 1 = base, pad 2 = emitter, pad 3 = collect or, pad 4 = connected to the lid braze ring. 5. in accordance with asme y14.5m , diameters are equivalent to x symbology. figure 4. physical dimensions, surface mo unt (ubc version, ceramic lid). symbol dimensions note symbol dimensions note inches millimeters inches millimeters min max min max min max min max bh .046 .071 1.17 1.80 ls1 .036 .040 0.91 1.02 bl .115 .128 2.92 3.25 ls2 .071 .079 1.81 2.01 bw .085 .108 2.16 2.74 lw .016 .024 0.41 0.61 cl .128 3.25 r .008 .203 cw .108 2.74 r1 .012 .305 ll1 .022 .038 0.56 0.96 r2 .022 .559 ll2 .017 .035 0.43 0.89
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0057 rev. 3 (110213) page 7 of 8 notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. dimension ch controls the overall package thickness. when a window lid is used, dimension ch must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). 4. the corner shape (square, notch, radius) may vary at the manufacturer's option, from that shown on the drawing. 5. dimensions lw2 minimum and l3 minimum and the appropriate castellation length define an unobstructed three- dimensional space traversing all of the ceramic layers in whic h a castellation was designed. (castellations are required on the bottom two layers, optional on the top ceramic layer.) dimension lw2 maximum and l3 maximum define the maximum width and depth of the castellation at any point on its surface. measurem ent of these dimensions may be made prior to solder dipping. 6. the co-planarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15mm) for solder dipped leadless chip carriers. 7. in accordance with asme y14.5m , diameters are equivalent to x symbology. figure 5 . physical dimensions - surface mount (ua version). dimensions ltr. inches millimeters min max min max bl .215 .225 5.46 5.71 bl2 .225 5.71 bw .145 .155 3.68 3.93 bw2 .155 3.93 ch .061 .075 1.55 1.90 l3 .003 .007 0.08 0.18 lh .029 .042 0.74 1.07 ll1 .032 .048 0.81 1.22 ll2 .072 .088 1.83 2.23 ls .045 .055 1.14 1.39 lw .022 .028 0.56 0.71 lw2 .006 .022 0.15 0.56 pin number. 1 2 3 4 transistor collector emitter base n/c
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0057 rev. 3 (110213) page 8 of 8 notes: 1. 1.dimensions are in inches. 2. millimeters are given for general information only. 3. dimension ch controls the overall package thickness. when a window lid is used, dimension ch must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). 4. the corner shape (square, notch, radius) may vary at the manufacturer's option, from that shown on the drawing. 5. dimensions lw2 minimum and l3 minimum and the appropriate castellation length define an unobstructed three- dimensional space traversing all of the ceramic layers in whic h a castellation was designed. (castellations are required on the bottom two layers, optional on the top ceramic layer.) dimension lw2 maximum and l3 maximum define the maximum width and depth of the castellation at any point on its surface. measurem ent of these dimensions may be made prior to solder dipping. 6. the co-planarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15mm) for solder dipped leadless chip carriers. 7. in accordance with asme y14.5m , diameters are equivalent to x symbology. figure 6. physical dimensions - surface mount (dual transistors, u version only, 2n2369au). dimensions ltr. inches millimeters min max min max bl .240 .250 6.10 6.35 bl2 .250 6.35 bw .165 .175 4.19 4.44 bw2 .175 4.44 ch .066 .080 1.68 2.03 l3 .003 .007 0.08 0.18 lh .026 .039 0.66 0.99 ll1 .060 .070 1.52 1.78 ll2 .082 .098 2.08 2.49 ls1 .095 .105 2.41 2.67 ls2 .045 .055 1.14 1.39 lw .022 .028 0.56 0.71 lw2 .006 .022 0.15 0.56 pin number 1 2 3 4 5 6 transistor collector no. 1 base no. 1 base no. 2 collector no. 2 emitter no. 2 emitter no. 1
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